BLP27M810Z
MFR #BLP27M810Z
FPN#BLP27M810Z-FL
MFRAmpleon
Part DescriptionRF MOSFET LDMOS 65V 2.7GHz 120mA 16-SON T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BLP27M810 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 500 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | RoHS (2015/863) |
| 1dB Compression Point (P1dB) | 10W |
| 3dB Compression Point (P3dB) | N/A |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel (Dual) Common Source |
| Gain | 17dB |
| Gate to Source Voltage | +13V, -500mV |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 1.4µA |
| Maximum Junction Temperature | 225°C |
| Maximum Operating Frequency | 2.7GHz |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | N/A |
| Minimum Operating Frequency | N/A |
| Noise Figure | N/A |
| Noise Test Current | 120mA |
| Noise Test Voltage | 28V |
| Number of Element per Chip | 2 |
| Package Type | 16-HVSON (4x6) |
| Signal Type | Continuous Wave, Pulse |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 10W |
| Voltage Rating | 65V |