BLP10H660PY
MFR #BLP10H660PY
FPN#BLP10H660PY-FL
MFRAmpleon
Part DescriptionRF MOSFET LDMOS 110V 1GHz 320mA SOT-1223-2 T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BLP10H660P |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 100 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | RoHS (2015/863), Unknown |
| 1dB Compression Point (P1dB) | 47.8dBm |
| 3dB Compression Point (P3dB) | 48.3dBm |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel (Dual) Common Source |
| Gain | 18dB |
| Gate to Source Voltage | +11V, -6V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 1.4µA |
| Maximum Junction Temperature | 225°C |
| Maximum Operating Frequency | 1GHz |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | N/A |
| Minimum Operating Frequency | N/A |
| Noise Figure | N/A |
| Noise Test Current | 320mA |
| Noise Test Voltage | 50V |
| Number of Element per Chip | 2 |
| Package Type | 4-HSOPF |
| Signal Type | Continuous Wave, Pulse |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 60W |
| Voltage Rating | 110V |