BLF888AS,112
MFR #BLF888AS,112
FPN#BLF888AS,112-FL
MFRAmpleon
Part DescriptionRF MOSFET LDMOS 110V 860MHz 1.3A SOT-539B
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BLF888AS |
| Packaging Type | N/A |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | RoHS (2015/863) |
| 1dB Compression Point (P1dB) | N/A |
| 3dB Compression Point (P3dB) | N/A |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel (Dual) Common Source |
| Gain | 21dB |
| Gate to Source Voltage | +11V, -500mV |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 2.8µA |
| Maximum Junction Temperature | 225°C |
| Maximum Operating Frequency | 860MHz |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | N/A |
| Minimum Operating Frequency | 470MHz |
| Noise Figure | N/A |
| Noise Test Current | 1.3A |
| Noise Test Voltage | 50V |
| Number of Element per Chip | 2 |
| Package Type | SOT539B |
| Signal Type | Continuous Wave, Pulse |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 600W |
| Voltage Rating | 110V |