BLF6G10LS-200RN,11
MFR #BLF6G10LS-200RN,11
FPN#BLF6G10LS-200RN,11-FL
MFRAmpleon
Part DescriptionRF MOSFET LDMOS 65V 1GHz 1.4A SOT-502B T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BLF6G10LS-200RN |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 100 |
| Lifecycle Status | Active, Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| 1dB Compression Point (P1dB) | N/A |
| 3dB Compression Point (P3dB) | N/A |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Gain | 20dB |
| Gate to Source Voltage | +13V, -500mV |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 4.2µA |
| Maximum Junction Temperature | 225°C |
| Maximum Operating Frequency | 1GHz |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | N/A |
| Minimum Operating Frequency | 700MHz |
| Noise Figure | N/A |
| Noise Test Current | 1.4A |
| Noise Test Voltage | 28V |
| Number of Element per Chip | 1 |
| Package Type | SOT502B |
| Signal Type | Continuous Wave |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 200W |
| Voltage Rating | 65V |