BLF10H6600PU
MFR #BLF10H6600PU
FPN#BLF10H6600PU-FL
MFRAmpleon
Part DescriptionRF MOSFET LDMOS 110V 1GHz 2A SOT-539A
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | BLF10H6600P |
Packaging Type | N/A |
Lifecycle Status | Active |
ROHS | Compliant |
RoHs Exemption Type | None, RoHS (2015/863) |
Reach Status | Compliant |
1dB Compression Point (P1dB) | 57.6dBm |
3dB Compression Point (P3dB) | 58.1dBm |
Channel Mode | Enhancement |
Configuration | 2 N-Channel (Dual) Common Source |
Gain | 20.8dB |
Gate to Source Voltage | +11V, -500mV |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 2.8µA |
Maximum Junction Temperature | 225°C |
Maximum Operating Frequency | 1GHz |
Maximum Output Power | N/A |
Minimum Junction Temperature | N/A |
Minimum Operating Frequency | 400MHz |
Noise Figure | N/A |
Noise Test Current | 2A |
Noise Test Voltage | 50V |
Number of Element per Chip | 2 |
Package Type | SOT539A |
Signal Type | Continuous Wave, Pulse |
Technology Type | N/A |
Transistor Type | LDMOS |
Typical Output Power | 600W |
Voltage Rating | 110V |