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NTTFS008P03P8Z
onsemi

NTTFS008P03P8Z

MFR #NTTFS008P03P8Z

FPN#NTTFS008P03P8Z-FL

MFRonsemi

Part DescriptionP-Channel 30 V 22A (Ta), 96A (Tc) 2.36W (Ta), 50W (Tc) Surface Mount 8-PQFN (3.3x3.3)
Datasheet
56877-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameNTTFS008P03P8Z
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage30V
Drive Voltage4.5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance5600pF
Input Capacitance Test Voltage15V
Life Cycle StatusActive
Maximum Continuous Drain Current22A (Ta), 96A (Tc)
Maximum Drain to Source Resistance3.8 mOhm @ 18A, 10V
Maximum Gate to Source Threshold Voltage3V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.36W (Ta), 50W (Tc)
Maximum Pulse Drain Current418A
Maximum Total Gate Charge134nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package Type8-PQFN (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge51nC
Typical Gate to Source Charge15nC