FQA9N90C-F109
MFR #FQA9N90C-F109
FPN#FQA9N90C-F109-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 900V 9A(Tc) 280W(Tc) Through Hole, TO-3P-3
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FQA9N90C_F109 |
| Packaging Type | Tube |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 900V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±30V |
| Input Capacitance | 2730pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 9A (Tc) |
| Maximum Drain to Source Resistance | 1.4 Ohm @ 4.5A, 10V |
| Maximum Gate to Source Threshold Voltage | 5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 280W (Tc) |
| Maximum Pulse Drain Current | 36A |
| Maximum Total Gate Charge | 58nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-3PN |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 18nC |
| Typical Gate to Source Charge | 13nC |