FF900R12IE4VBOSA1
MFR #FF900R12IE4VBOSA1
FPN#FF900R12IE4VBOSA1-FL
MFRInfineon
Part DescriptionIGBT Module Trench Field Stop 2-Independent 1200V 900A 5100W Chassis Mount, 10-Module
Datasheet
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Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FF900R12IE4V |
Packaging Type | Tray |
Lifecycle Status | Last Time Buy |
RoHS | Compliant with Exemption |
RoHS Exemption Type | RoHS (2015/863), Unknown |
Configuration | 2 Independent |
IGBT Type | Trench Field Stop |
Input Capacitance | 54000pF @ 25V |
Input Type | Standard |
Life Cycle Status | Active (NRND) |
Maximum Collector Current | 900A |
Maximum Collector Emitter Breakdown Voltage | 1.2kV |
Maximum Collector Emitter Saturation Voltage | 2.1V @ 15V, 900A |
Maximum Cutoff Collector Current | 5mA |
Maximum Gate Emitter Voltage | 20V |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 5.1kW |
Minimum Junction Temperature | -40°C (TJ) |
NTC Thermistor | Yes |
Package Type | N/A |