FF600R12ME4AB11BOSA1
MFR #FF600R12ME4AB11BOSA1
FPN#FF600R12ME4AB11BOSA1-FL
MFRInfineon
Part DescriptionIGBT MODULE 1200V 3350W
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FF600R12ME4A_B11 |
Packaging Type | Tray |
Lifecycle Status | Obsolete |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(c)-I, RoHS (2015/863) |
Reach Status | Compliant |
Configuration | 2 Independent |
IGBT Type | Trench Field Stop |
Input Capacitance | 37000pF @ 25V |
Input Type | Standard |
Life Cycle Status | Obsolete |
Maximum Collector Current | 950A |
Maximum Collector Emitter Breakdown Voltage | 1.2kV |
Maximum Collector Emitter Saturation Voltage | 2.1V @ 15V, 600A |
Maximum Cutoff Collector Current | 3mA |
Maximum Gate Emitter Voltage | ±20V |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 3.35kW |
Minimum Junction Temperature | -40°C (TJ) |
NTC Thermistor | Yes |
Package Type | AG-ECONOD |