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FF600R12IE4VBOSA1

MFR #FF600R12IE4VBOSA1

FPN#FF600R12IE4VBOSA1-FL

MFRInfineon

Part DescriptionPP, IHM I, XHP 1,7kV
Quote Onlymore info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFF600R12IE4V
Packaging TypeTray
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(c)-I, RoHS (2015/863)
Reach StatusCompliant
ConfigurationHalf Bridge Inverter
IGBT TypeTrench Field Stop
Input Capacitance37000pF @ 25V
Input TypeStandard
Life Cycle StatusActive (NRND)
Maximum Collector Current600A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.05V @ 15V, 600A
Maximum Cutoff Collector Current5mA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.35kW
Minimum Junction Temperature-40°C (TJ)
NTC ThermistorYes
Package TypeN/A