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FDV303N
onsemi

FDV303N

MFR #FDV303N

FPN#FDV303N-FL

MFRonsemi

Part DescriptionN-Channel 25 V 680mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Datasheet
100719-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDV303N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage25V
Drive Voltage2.7V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage8V
Input Capacitance50pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current680mA (Ta)
Maximum Drain to Source Resistance450 mOhm @ 500mA, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation350mW (Ta)
Maximum Pulse Drain Current2A
Maximum Total Gate Charge2.3nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge450pC
Typical Gate to Source Charge380pC