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FDN337N
onsemi

FDN337N

MFR #FDN337N

FPN#FDN337N-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount, SOT-23-3
Datasheet
100669-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFDN337N
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage30V
Drive Voltage2.5V, 4.5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±8V
Input Capacitance300pF
Input Capacitance Test Voltage10V
Life Cycle StatusActive
Maximum Continuous Drain Current2.2A (Ta)
Maximum Drain to Source Resistance65 mOhm @ 2.2A, 4.5V
Maximum Gate to Source Threshold Voltage1V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation460mW (Ta)
Maximum Pulse Drain Current10A
Maximum Total Gate Charge9nC
Maximum Total Gate Charge Test Voltage4.5V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge1.9nC
Typical Gate to Source Charge1.1nC