BSS84PW H6327
MFR #BSS84PW H6327
FPN#BSS84PW H6327-FL
MFRCypress Semiconductor
Part DescriptionMOSFET P-Channel 60V 150mA (Ta) SOT-323 T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BSS84PW |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | RoHS (2015/863) |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 2.7V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 19.1pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 150mA (Ta) |
| Maximum Drain to Source Resistance | 8 Ohm @ 150mA, 10V |
| Maximum Gate to Source Threshold Voltage | 2V @ 20µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 300mW (Ta) |
| Maximum Pulse Drain Current | 600mA |
| Maximum Total Gate Charge | 1.5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | PG-SOT323-3 |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 300pC |
| Typical Gate to Source Charge | 250pC |