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BSS138LT1G
onsemi

BSS138LT1G

MFR #BSS138LT1G

FPN#BSS138LT1G-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 50V 200mA (Ta) 225mW (Ta) Surface Mount, TO-236-3
Datasheet
40035-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBSS138L
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
RoHSCompliant
RoHS Exemption TypeRoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage50V
Drive Voltage2.75V, 5V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance50pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current200mA (Ta)
Maximum Drain to Source Resistance3.5 Ohm @ 200mA, 5V
Maximum Gate to Source Threshold Voltage1.5V @ 1mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation225mW (Ta)
Maximum Pulse Drain Current800mA
Maximum Total Gate ChargeN/A
Maximum Total Gate Charge Test VoltageN/A
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain ChargeN/A
Typical Gate to Source ChargeN/A