BSR316PH6327XTSA1
MFR #BSR316PH6327XTSA1
FPN#BSR316PH6327XTSA1-FL
MFRCypress Semiconductor
Part DescriptionMOSFET P-Channel 100V 360mA (Ta) 500mW (Tc) Surface Mount, TO-236-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BSR316P |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 165pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 360mA (Ta) |
| Maximum Drain to Source Resistance | 1.8 Ohm @ 360mA, 10V |
| Maximum Gate to Source Threshold Voltage | 1V @ 170µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 500mW (Tc) |
| Maximum Pulse Drain Current | 1.44A |
| Maximum Total Gate Charge | 7nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | PG-SC59-3 |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 1.6nC |
| Typical Gate to Source Charge | 300pC |