BSC160N15NS5ATMA1
MFR #BSC160N15NS5ATMA1
FPN#BSC160N15NS5ATMA1-FL
MFRInfineon
Part DescriptionMOSFET TRANSISTOR, 56A, 150V, .0137OHM
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BSC160N15NS5 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 5000 |
| Lifecycle Status | Active |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 150V |
| Drive Voltage | 8V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1820pF |
| Input Capacitance Test Voltage | 75V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 56A (Tc) |
| Maximum Drain to Source Resistance | 16 mOhm @ 28A, 10V |
| Maximum Gate to Source Threshold Voltage | 4.6V @ 60µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 96W (Tc) |
| Maximum Pulse Drain Current | 224A |
| Maximum Total Gate Charge | 23.1nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | PG-TDSON-8 FL |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 4nC |
| Typical Gate to Source Charge | 8nC |