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BS170
MFR #BS170
FPN#BS170-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 60V 500mA Through Hole, TO-226-3
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | BS170 |
Packaging Type | Bulk |
Packaging Quantity | 10000 |
Lifecycle Status | Active |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
Reach Status | Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±20V |
Input Capacitance | 60pF |
Input Capacitance Test Voltage | 10V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 500mA |
Maximum Drain to Source Resistance | 5 Ohm @ 200mA, 10V |
Maximum Gate to Source Threshold Voltage | 3V @ 1mA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 350mW (Ta) |
Maximum Pulse Drain Current | N/A |
Maximum Total Gate Charge | N/A |
Maximum Total Gate Charge Test Voltage | N/A |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | TO-92 |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | N/A |
Typical Gate to Source Charge | N/A |