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BC856BLT1G
onsemi

BC856BLT1G

MFR #BC856BLT1G

FPN#BC856BLT1G-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 65 V 100 mA 100MHz 300 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
39594-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBC856BLT1G
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeRoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationPNP
Gain Bandwidth100MHz
Life Cycle StatusActive
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage65V
Maximum Collector Emitter Saturation Voltage650mV @ 5mA, 100mA
Maximum Cutoff Collector Current15nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation225mW
Minimum DC Current Gain220 @ 2mA, 5V
Minimum Operating Temperature-55°C (TJ)
Package TypeSOT-23-3 (TO-236)
Technology TypeSI
Transistor TypeSingle