ATP302-TL-H
MFR #ATP302-TL-H
FPN#ATP302-TL-H-FL
MFRonsemi
Part DescriptionP-Channel 60 V 70A (Ta) 70W (Tc) Surface Mount ATPAK
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | ATP302 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 5400pF |
| Input Capacitance Test Voltage | 20V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 70A (Ta) |
| Maximum Drain to Source Resistance | 13 mOhm @ 35A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA |
| Maximum Junction Temperature | 150°C |
| Maximum Power Dissipation | 70W (Tc) |
| Maximum Pulse Drain Current | 280A |
| Maximum Total Gate Charge | 115nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Package Type | ATPAK |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 25nC |
| Typical Gate to Source Charge | 20nC |