ATP112-TL-H
MFR #ATP112-TL-H
FPN#ATP112-TL-H-FL
MFRonsemi
Part DescriptionMOSFET P-Channel 60V 25A (Ta) 40W (Tc) Surface Mount, ATPAK-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | ATP112 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1450pF |
| Input Capacitance Test Voltage | 20V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 25A (Ta) |
| Maximum Drain to Source Resistance | 43 mOhm @ 13A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA |
| Maximum Junction Temperature | 150°C |
| Maximum Power Dissipation | 40W (Tc) |
| Maximum Pulse Drain Current | 75A |
| Maximum Total Gate Charge | 33.5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Package Type | ATPAK |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 7.9nC |
| Typical Gate to Source Charge | 5.3nC |