AFGHL50T65RQDN
MFR #AFGHL50T65RQDN
FPN#AFGHL50T65RQDN-FL
MFRonsemi
Part DescriptionIGBT-Single 650V 78A 346W TO247-3 Tube
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | AFGHL50T65RQDN |
Packaging Type | Tube |
Packaging Quantity | 450 |
Lifecycle Status | Active |
ROHS | Compliant with Exemption |
RoHs Exemption Type | 7(a), RoHS (2015/863) |
RoHs China | Not Compliant |
Reach Status | Not Compliant |
Configuration | Single |
Gate Charge | 65nC |
IGBT Type | Field Stop |
Input Type | Standard |
Life Cycle Status | Active |
Maximum Collector Current | 78A |
Maximum Collector Emitter Breakdown Voltage | 650V |
Maximum Collector Emitter Saturation Voltage | 1.81V @ 50A, 15V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Junction Temperature | 175°C (TJ) |
Maximum Power Dissipation | 346W |
Maximum Switching Frequency | N/A |
Minimum Junction Temperature | -55°C (TJ) |
Minimum Switching Frequency | N/A |
Package Type | TO-247-3 |
Pulsed Collector Current | 200A |
Reverse Recovery Time | 57ns |
Switching Delay Time | 41ns/76ns |
Switching Energy | 3.09mJ (on), 830µJ (off) |
Technology Type | N/A |
Test Condition | 400V, 50A, 2.5 Ohm, 15V |