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AFGHL50T65RQDN

AFGHL50T65RQDN

MFR #AFGHL50T65RQDN

FPN#AFGHL50T65RQDN-FL

MFRonsemi

Part DescriptionIGBT-Single 650V 78A 346W TO247-3 Tube
Quote Onlymore info
Multiples of: 450more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameAFGHL50T65RQDN
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge65nC
IGBT TypeField Stop
Input TypeStandard
Life Cycle StatusActive
Maximum Collector Current78A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage1.81V @ 50A, 15V
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation346W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-247-3
Pulsed Collector Current200A
Reverse Recovery Time57ns
Switching Delay Time41ns/76ns
Switching Energy3.09mJ (on), 830µJ (off)
Technology TypeN/A
Test Condition400V, 50A, 2.5 Ohm, 15V