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AFGHL30T65RQDN

AFGHL30T65RQDN

MFR #AFGHL30T65RQDN

FPN#AFGHL30T65RQDN-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 600V 20.6A (Tj) TO-220-3 Tube
Quote Onlymore info
Multiples of: 450more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameAFGHL30T65RQDN
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge37nC
IGBT TypeField Stop
Input TypeStandard
Life Cycle StatusActive
Maximum Collector Current42A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage1.82V @ 15V, 30A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation230.8W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-247-3
Pulsed Collector Current120A
Reverse Recovery Time39ns
Switching Delay Time18ns/68ns
Switching Energy340µJ (on), 320µJ (off)
Technology TypeN/A
Test Condition400V, 15A, 2.5 Ohm, 15V