A2I09VD015NR1
MFR #A2I09VD015NR1
FPN#A2I09VD015NR1-FL
MFRNXP
Part DescriptionAIRFAST RF LDMOS WIDEBAND INTEGR
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | A2I09VD015NR1 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 500 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| 1dB Compression Point (P1dB) | 40.2dBm |
| 3dB Compression Point (P3dB) | 41.1dBm |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Gain | 32.8dB |
| Gate to Source Voltage | +10V, -500mV |
| Life Cycle Status | Last Time Buy |
| Maximum Continuous Drain Current | 10µA |
| Maximum Junction Temperature | 225°C |
| Maximum Operating Frequency | 960MHz |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | -40°C |
| Minimum Operating Frequency | 575MHz |
| Noise Figure | N/A |
| Noise Test Current | 16mA, 84mA |
| Noise Test Voltage | 48V |
| Number of Element per Chip | 2 |
| Package Type | TO-270WB-15 |
| Signal Type | Continuous Wave, Pulse |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 2W |
| Voltage Rating | 105V |