A2I08H040GNR1
MFR #A2I08H040GNR1
FPN#A2I08H040GNR1-FL
MFRNXP
Part DescriptionRF Mosfet LDMOS (Dual) 28 V 25 mA 920MHz 30.7dB 9W TO-270WBG-15
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | A2I08H040N |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 500 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant, Compliant with Exemption |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| 1dB Compression Point (P1dB) | 46.7dBm |
| 3dB Compression Point (P3dB) | 47.5dBm |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Gain | 30.7dB @ 920MHz |
| Gate to Source Voltage | +10V, -500mV |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | N/A |
| Maximum Junction Temperature | 225°C |
| Maximum Operating Frequency | 960MHz |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | -40°C |
| Minimum Operating Frequency | 728MHz |
| Noise Figure | N/A |
| Noise Test Current | 25mA |
| Noise Test Voltage | 28V |
| Number of Element per Chip | 2 |
| Package Type | TO-270WBG-15 |
| Signal Type | Continuous Wave, Pulse |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 9W |
| Voltage Rating | 65V |