A2G22S160-01SR3
MFR #A2G22S160-01SR3
FPN#A2G22S160-01SR3-FL
MFRNXP
Part DescriptionAirfast RF Power GaN Transistor, 1800-2200 MHz, 32 W Avg., 48 V, CFM2FG
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | A2G22S160-01SR3 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 250 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| ROHS China | Compliant |
| 1dB Compression Point (P1dB) | 50.4dBm |
| Configuration | PNP |
| Gain | 19.6dB |
| Gain Bandwidth | N/A |
| Internal Configuration | PNP |
| Life Cycle Status | Obsolete |
| Maximum Collector Base Voltage | N/A |
| Maximum Collector Current | N/A |
| Maximum Collector Emitter Breakdown Voltage | N/A |
| Maximum Emitter Base Voltage | N/A |
| Maximum Junction Temperature | 225°C (TJ) |
| Maximum Power Dissipation | N/A |
| Minimum DC Current Gain | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Noise Figure | N/A |
| Number of Elements | 1 |
| Output Intercept Point (IP3) | 51.8dBm |
| Output Power | 32W |
| Package Type | NI-400S-240 |
| Technology Type | N/A |
| Transistor Type | Single |