3LN01M-TL-E
MFR #3LN01M-TL-E
FPN#3LN01M-TL-E-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 30V 150mA (Ta) SOT-323 T/R
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 3LN01M |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 30V |
| Drive Voltage | 1.5V, 4V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±10V |
| Input Capacitance | 7pF |
| Input Capacitance Test Voltage | 10V |
| Junction to Case Thermal Resistance | N/A |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 150mA (Ta) |
| Maximum Drain to Source Resistance | 3.7 Ohm @ 80mA, 4V |
| Maximum Gate to Source Threshold Voltage | 1.3V @ 100µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 150mW (Ta) |
| Maximum Pulse Drain Current | 600mA |
| Maximum Total Gate Charge | 1.58nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Package Type | 3-MCP |
| Single Pulse Avalanche Energy | N/A |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 310pC |
| Typical Gate to Source Charge | 260pC |