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2SJ661-DL-1E
MFR #2SJ661-DL-1E
FPN#2SJ661-DL-1E-FL
MFRonsemi
Part DescriptionMOSFET P-Channel Single 60V 38A (Ta) TO-263-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2SJ661 |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 800 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 4360pF |
| Input Capacitance Test Voltage | 20V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 38A (Ta) |
| Maximum Drain to Source Resistance | 39 mOhm @ 19A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.6V @ 1mA |
| Maximum Junction Temperature | 150°C |
| Maximum Power Dissipation | 1.65W (Ta), 65W (Tc) |
| Maximum Pulse Drain Current | 152A |
| Maximum Total Gate Charge | 80nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Package Type | TO-263 |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 12nC |
| Typical Gate to Source Charge | 15nC |