2SD1801S-E
MFR #2SD1801S-E
FPN#2SD1801S-E-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 50V 2A 150MHz 800mW Through Hole, TO-251-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2SD1801 |
| Packaging Type | Bulk |
| Packaging Quantity | 500 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Compliant |
| Configuration | NPN |
| Gain Bandwidth | 150MHz |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 2A |
| Maximum Collector Emitter Breakdown Voltage | 50V |
| Maximum Collector Emitter Saturation Voltage | 400mV @ 50mA, 1A |
| Maximum Cutoff Collector Current | 100nA (ICBO) |
| Maximum Emitter Base Voltage | 6V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 800mW |
| Minimum DC Current Gain | 100 @ 100mA, 2V |
| Minimum Operating Temperature | N/A |
| Package Type | TP |
| Technology Type | N/A |
| Transistor Options | N/R |
| Transistor Type | Single |