2SB815-6-TB-E
MFR #2SB815-6-TB-E
FPN#2SB815-6-TB-E-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 15 V 700 mA 250MHz 200 mW Surface Mount 3-CP
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2SB815 |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Obsolete |
ROHS | Compliant |
RoHs Exemption Type | None, RoHS (2015/863) |
RoHs China | Compliant |
Reach Status | Compliant |
Configuration | PNP |
Gain Bandwidth | 250MHz |
Life Cycle Status | Obsolete |
Maximum Collector Current | 700mA |
Maximum Collector Emitter Breakdown Voltage | 15V |
Maximum Collector Emitter Saturation Voltage | 120mV @ 10mA, 100mA |
Maximum Cutoff Collector Current | 100nA (ICBO) |
Maximum Emitter Base Voltage | 5V |
Maximum Operating Temperature | 125°C (TJ) |
Maximum Power Dissipation | 200mW |
Minimum DC Current Gain | 200 @ 50mA, 2V |
Minimum Operating Temperature | N/A |
Package Type | SC-59-3/CP3 |
Technology Type | N/A |
Transistor Options | N/R |
Transistor Type | Single |