2SB1216T-E
MFR #2SB1216T-E
FPN#2SB1216T-E-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 100V 4A 130MHz 1W Through Hole, TO-251-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2SB1216 |
| Packaging Type | Bulk |
| Packaging Quantity | 500 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Configuration | PNP |
| Gain Bandwidth | 130MHz, 180MHz |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 4A |
| Maximum Collector Emitter Breakdown Voltage | 100V |
| Maximum Collector Emitter Saturation Voltage | 500mV @ 200mA, 2A |
| Maximum Cutoff Collector Current | 1µA (ICBO) |
| Maximum Emitter Base Voltage | 6V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1W |
| Minimum DC Current Gain | 200 @ 500mA, 5V |
| Minimum Operating Temperature | N/A |
| Package Type | TP |
| Technology Type | SI |
| Transistor Options | N/R |
| Transistor Type | Single |