2SA2169-E
MFR #2SA2169-E
FPN#2SA2169-E-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 50 V 10 A 130MHz 950 mW Through Hole TP
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2SA2169 |
| Packaging Type | Bulk |
| Packaging Quantity | 500 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | PNP |
| Gain Bandwidth | 130MHz |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 10A |
| Maximum Collector Emitter Breakdown Voltage | 50V |
| Maximum Collector Emitter Saturation Voltage | 580mV @ 250mA, 5A |
| Maximum Cutoff Collector Current | 10µA (ICBO) |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 950mW |
| Minimum DC Current Gain | 200 @ 1A, 2V |
| Minimum Operating Temperature | N/A |
| Package Type | TP |
| Technology Type | SI |
| Transistor Options | N/R |
| Transistor Type | Single |