2SA1962RTU
MFR #2SA1962RTU
FPN#2SA1962RTU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2SA1962 |
Packaging Type | Tube |
Packaging Quantity | 450 |
Lifecycle Status | Obsolete |
ROHS | Compliant with Exemption |
RoHs Exemption Type | 7(a), RoHS (2015/863) |
RoHs China | Not Compliant |
Reach Status | Not Compliant |
Configuration | PNP |
Gain Bandwidth | 30MHz |
Life Cycle Status | Obsolete |
Maximum Collector Current | 17A |
Maximum Collector Emitter Breakdown Voltage | 250V |
Maximum Collector Emitter Saturation Voltage | 3V @ 800mA, 8A |
Maximum Cutoff Collector Current | 5µA |
Maximum Operating Temperature | 150°C (TJ) |
Maximum Power Dissipation | 130W |
Minimum DC Current Gain | 55 @ 1A, 5V |
Minimum Operating Temperature | -50°C (TJ) |
Package Type | TO-3PN |
Technology Type | SI |
Transistor Options | N/R |
Transistor Type | Single |