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2SA1962RTU

2SA1962RTU

MFR #2SA1962RTU

FPN#2SA1962RTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P
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Multiples of: 450more info
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2SA1962
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationPNP
Gain Bandwidth30MHz
Life Cycle StatusObsolete
Maximum Collector Current17A
Maximum Collector Emitter Breakdown Voltage250V
Maximum Collector Emitter Saturation Voltage3V @ 800mA, 8A
Maximum Cutoff Collector Current5µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation130W
Minimum DC Current Gain55 @ 1A, 5V
Minimum Operating Temperature-50°C (TJ)
Package TypeTO-3PN
Technology TypeSI
Transistor OptionsN/R
Transistor TypeSingle