2N7002DWH6327XTSA1
MFR #2N7002DWH6327XTSA1
FPN#2N7002DWH6327XTSA1-FL
MFRCypress Semiconductor
Part DescriptionMOSFET 2 N-Channel Array 60V 300mA (Ta) Surface Mount SOT-363
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2N7002DW |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Active |
| RoHS | Compliant |
| RoHS Exemption Type | RoHS (2015/863), Unknown |
| Channel Mode | Enhancement |
| Configuration | 2 N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 4.5V, 10V |
| FET Feature | Logic Level Gate |
| FET Options | N/R |
| FET Type | Array |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 20pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 300mA (Ta) |
| Maximum Drain to Source Resistance | 3 Ohm @ 500mA, 10V |
| Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 500mW (Ta) |
| Maximum Pulse Drain Current | 1.2A |
| Maximum Total Gate Charge | 600pC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| PK Package Dimensions Note | Popular package size 100% from Suppliers use this Dimension |
| Package Type | PG-SOT363-6-1 |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 200pC |
| Typical Gate to Source Charge | 50pC |