2N6667G
MFR #2N6667G
FPN#2N6667G-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor PNP - Darlington 60 V 10 A 2 W Through Hole TO-220
Datasheet
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Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2N6667 |
| Packaging Type | Tube |
| Packaging Quantity | 50 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Configuration | PNP - Darlington |
| Gain Bandwidth | N/A |
| Life Cycle Status | Obsolete |
| Maximum Collector Base Voltage | 60V |
| Maximum Collector Current | 10A |
| Maximum Collector Emitter Breakdown Voltage | 60V |
| Maximum Collector Emitter Saturation Voltage | 3V @ 100mA, 10A |
| Maximum Cutoff Collector Current | 1mA |
| Maximum Emitter Base Voltage | 5V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 65W |
| Minimum DC Current Gain | 1000 @ 5A, 3V |
| Minimum Operating Temperature | -65°C (TJ) |
| Package Type | TO-220-3 |
| Technology Type | SI |
| Transistor Options | N/R |
| Transistor Type | Single |