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2N6517BU
MFR #2N6517BU
FPN#2N6517BU-FL
MFRonsemi
Part DescriptionBipolar (BJT) Transistor NPN 350 V 500 mA 200MHz 625 mW Through Hole TO-92-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 2N6517 |
| Packaging Type | Bulk |
| Packaging Quantity | 10000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | RoHS (2015/863) |
| Reach Status | Compliant |
| Configuration | NPN |
| Gain Bandwidth | 200MHz |
| Life Cycle Status | Active |
| Maximum Collector Current | 500mA |
| Maximum Collector Emitter Breakdown Voltage | 350V |
| Maximum Collector Emitter Saturation Voltage | 1V @ 5mA, 50mA |
| Maximum Cutoff Collector Current | 50nA (ICBO) |
| Maximum Emitter Base Voltage | 6V |
| Maximum Operating Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 625mW |
| Minimum DC Current Gain | 30 @ 30mA, 10V |
| Minimum Operating Temperature | N/A |
| Package Type | TO-92 |
| Technology Type | SI |
| Transistor Options | N/R |
| Transistor Type | Single |