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2N5550TAR
onsemi

2N5550TAR

MFR #2N5550TAR

FPN#2N5550TAR-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 140 V 600 mA 300MHz 625 mW Through Hole TO-92-3
Datasheet
36163-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family Name2N5550
Packaging TypeFan-Fold
Packaging Quantity2000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
ConfigurationNPN
Gain Bandwidth300MHz
Life Cycle StatusActive
Maximum Collector Current600mA
Maximum Collector Emitter Breakdown Voltage140V
Maximum Collector Emitter Saturation Voltage250mV @ 5mA, 50mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation625mW
Minimum DC Current Gain60 @ 10mA, 5V
Minimum Operating TemperatureN/A
Package TypeTO-92
Technology TypeSI
Transistor OptionsN/R
Transistor TypeSingle