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A2T27S007NT1

MFR #A2T27S007NT1

FPN#A2T27S007NT1-FL

MFRNXP

Part DescriptionAIRFAST RF POWER LDMOS TRANSISTO
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameA2T27S007NT1
Packaging TypeTape and Reel
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
1dB Compression Point (P1dB)7W
3dB Compression Point (P3dB)N/A
Channel ModeEnhancement
ConfigurationN-Channel
Gain18.9dB
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency2.7GHz
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency400MHz
Noise FigureN/A
Noise Test Current60mA
Noise Test Voltage28V
Number of Element per Chip1
Package Type16-DFN (4x6)
Signal TypeContinuous Wave
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power28.8dBm
Voltage Rating65V