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NXP

A2T21H360-23NR6

MFR #A2T21H360-23NR6

FPN#A2T21H360-23NR6-FL

MFRNXP

Part DescriptionAirfast RF Power LDMOS Transistor 2110-2200 MHz, 63 W Avg., 28 V.
Datasheet
38186-Datasheet
Quote Onlymore info
Multiples of: 150more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameA2T21H360-23NR6
Packaging TypeTape and Reel
Packaging Quantity150
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
1dB Compression Point (P1dB)53.6dBm
3dB Compression Point (P3dB)55.7dBm
Channel ModeEnhancement
Configuration2 N-Channel
Gain22.6dB
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency2.2GHz
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency2.11GHz
Noise FigureN/A
Noise Test CurrentN/A
Noise Test VoltageN/A
Number of Element per Chip2
Package TypeOM-1230-4L2S
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power63W
Voltage Rating65V