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NXP

A2T20H330W24SR6

MFR #A2T20H330W24SR6

FPN#A2T20H330W24SR6-FL

MFRNXP

Part DescriptionAirfast RF Power LDMOS Transistor 1880-2025 MHz, 58 W Avg., 28 V
Datasheet
38185-Datasheet
Quote Onlymore info
Multiples of: 150more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameA2T20H330W24SR6
Packaging TypeTape and Reel
Packaging Quantity150
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusNot Compliant
1dB Compression Point (P1dB)53.8dBm
3dB Compression Point (P3dB)55.8dBm
Channel ModeEnhancement
Configuration2 N-Channel
Gain22.2dB
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency2.025GHz
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency1.88GHz
Noise FigureN/A
Noise Test Current700mA
Noise Test Voltage28V
Number of Element per Chip2
Package TypeNI-1230-4LS2L
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power58W
Voltage Rating65V