A2T18S262W12NR3
MFR #A2T18S262W12NR3
FPN#A2T18S262W12NR3-FL
MFRNXP
Part DescriptionAIRFAST RF POWER LDMOS TRANSISTO
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | A2T18S262W12N |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 250 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant |
| RoHS Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| 1dB Compression Point (P1dB) | 53.6dBm |
| 3dB Compression Point (P3dB) | 55.9dBm |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Gain | 19.3dB @ 1.88GHz |
| Gate to Source Voltage | +10V, -6V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 10µA |
| Maximum Junction Temperature | 225°C |
| Maximum Operating Frequency | 1.88GHz |
| Maximum Output Power | N/A |
| Minimum Junction Temperature | -40°C |
| Minimum Operating Frequency | 1.805GHz |
| Noise Figure | N/A |
| Noise Test Current | 1.6A |
| Noise Test Voltage | 28V |
| Number of Element per Chip | 1 |
| Package Type | OM-880X-2L2L |
| Signal Type | Continuous Wave, Pulse |
| Technology Type | N/A |
| Transistor Type | LDMOS |
| Typical Output Power | 56W |
| Voltage Rating | 65V |