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NXP

A2T18S262W12NR3

MFR #A2T18S262W12NR3

FPN#A2T18S262W12NR3-FL

MFRNXP

Part DescriptionAIRFAST RF POWER LDMOS TRANSISTO
Datasheet
38184-Datasheet
Quote Onlymore info
Multiples of: 250more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameA2T18S262W12N
Packaging TypeTape and Reel
Packaging Quantity250
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
1dB Compression Point (P1dB)53.6dBm
3dB Compression Point (P3dB)55.9dBm
Channel ModeEnhancement
ConfigurationN-Channel
Gain19.3dB @ 1.88GHz
Gate to Source Voltage+10V, -6V
Life Cycle StatusObsolete
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency1.88GHz
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency1.805GHz
Noise FigureN/A
Noise Test Current1.6A
Noise Test Voltage28V
Number of Element per Chip1
Package TypeOM-880X-2L2L
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power56W
Voltage Rating65V