A2I09VD015NR1
MFR #A2I09VD015NR1
FPN#A2I09VD015NR1-FL
MFRNXP
Part DescriptionAIRFAST RF LDMOS WIDEBAND INTEGR
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | A2I09VD015NR1 |
Packaging Type | Tape and Reel |
Packaging Quantity | 500 |
Lifecycle Status | Obsolete |
RoHS | Compliant |
RoHS Exemption Type | None, RoHS (2015/863) |
Reach Status | Compliant |
1dB Compression Point (P1dB) | 40.2dBm |
3dB Compression Point (P3dB) | 41.1dBm |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Gain | 32.8dB |
Gate to Source Voltage | +10V, -500mV |
Life Cycle Status | Last Time Buy |
Maximum Continuous Drain Current | 10µA |
Maximum Junction Temperature | 225°C |
Maximum Operating Frequency | 960MHz |
Maximum Output Power | N/A |
Minimum Junction Temperature | -40°C |
Minimum Operating Frequency | 575MHz |
Noise Figure | N/A |
Noise Test Current | 16mA, 84mA |
Noise Test Voltage | 48V |
Number of Element per Chip | 2 |
Package Type | TO-270WB-15 |
Signal Type | Continuous Wave, Pulse |
Technology Type | N/A |
Transistor Type | LDMOS |
Typical Output Power | 2W |
Voltage Rating | 105V |