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A2I09VD015GNR1

MFR #A2I09VD015GNR1

FPN#A2I09VD015GNR1-FL

MFRNXP

Part DescriptionAirfast RF Power LDMOS Wideband Integrated Power Amplifier, 575-960 MHz, 2 W Avg., 48 V.
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Multiples of: 500more info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameA2I09VD015GNR1
Packaging TypeTape and Reel
Packaging Quantity500
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
1dB Compression Point (P1dB)40.2dBm
3dB Compression Point (P3dB)41.1dBm
Channel ModeEnhancement
Configuration2 N-Channel
Gain32.8dB
Gate to Source Voltage+10V, -500mV
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current10µA
Maximum Junction Temperature225°C
Maximum Operating Frequency960MHz
Maximum Output PowerN/A
Minimum Junction Temperature-40°C
Minimum Operating Frequency575MHz
Noise FigureN/A
Noise Test Current16mA, 84mA
Noise Test Voltage48V
Number of Element per Chip2
Package TypeTO-270WBG-15
Signal TypeContinuous Wave, Pulse
Technology TypeN/A
Transistor TypeLDMOS
Typical Output Power2W
Voltage Rating105V