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FF600R12ME4AB11BOSA1

MFR #FF600R12ME4AB11BOSA1

FPN#FF600R12ME4AB11BOSA1-FL

MFRInfineon

Part DescriptionIGBT MODULE 1200V 3350W
Quote Onlymore info
Prices are in USD

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFF600R12ME4A_B11
Packaging TypeTray
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(c)-I, RoHS (2015/863)
Reach StatusCompliant
Configuration2 Independent
IGBT TypeTrench Field Stop
Input Capacitance37000pF @ 25V
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current950A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.1V @ 15V, 600A
Maximum Cutoff Collector Current3mA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.35kW
Minimum Junction Temperature-40°C (TJ)
NTC ThermistorYes
Package TypeAG-ECONOD