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Infineon

FF600R12IE4VBOSA1

MFR #FF600R12IE4VBOSA1

FPN#FF600R12IE4VBOSA1-FL

MFRInfineon

Part DescriptionPP, IHM I, XHP 1,7kV
Datasheet
44927-Datasheet
Quote Onlymore info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFF600R12IE4V
Packaging TypeTray
Packaging Quantity3
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(c)-I, RoHS (2015/863)
Reach StatusCompliant
ConfigurationHalf Bridge Inverter
IGBT TypeTrench Field Stop
Input Capacitance37000pF @ 25V
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current600A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.05V @ 15V, 600A
Maximum Cutoff Collector Current5mA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.35kW
Minimum Junction Temperature-40°C (TJ)
NTC ThermistorYes
Package TypeN/A