IRFF130
MFR #IRFF130
FPN#IRFF130-FL
MFRCypress Semiconductor
Part DescriptionMOSFET N-Channel 100V 8A (Tc) Through Hole, TO-205AF-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | IRFF130 |
| Packaging Type | Tray |
| Lifecycle Status | Active |
| ROHS | Not Compliant |
| RoHs Exemption Type | RoHS (2015/863) |
| RoHs China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 650pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 8A (Tc) |
| Maximum Drain to Source Resistance | 195 mOhm @ 8A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 25W (Tc) |
| Maximum Pulse Drain Current | 32A |
| Maximum Total Gate Charge | 28.51nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-205AF (TO-39) |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 16.59nC |
| Typical Gate to Source Charge | 6.34nC |