BSP170PH6327XTSA1
MFR #BSP170PH6327XTSA1
FPN#BSP170PH6327XTSA1-FL
MFRCypress Semiconductor
Part DescriptionMOSFET P-Channel Single 60V 1.9A (Ta), SOT223
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | BSP170P |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 1000 |
| Lifecycle Status | Active |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| RoHs China | Compliant |
| Channel Mode | Enhancement |
| Configuration | P-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 410pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Active |
| Maximum Continuous Drain Current | 1.9A (Ta) |
| Maximum Drain to Source Resistance | 300 mOhm @ 1.9A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 1.8W (Ta) |
| Maximum Pulse Drain Current | 7.6A |
| Maximum Total Gate Charge | 14nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| PK Package Dimensions Note | Popular package size 66% from Suppliers use this Dimension |
| Package Type | PG-SOT223-4 |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 4.9nC |
| Typical Gate to Source Charge | 1.4nC |