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Cypress Semiconductor

BSP170PH6327XTSA1

MFR #BSP170PH6327XTSA1

FPN#BSP170PH6327XTSA1-FL

MFRCypress Semiconductor

Part DescriptionMOSFET P-Channel Single 60V 1.9A (Ta), SOT223
Datasheet
40006-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameBSP170P
Packaging TypeTape and Reel
Packaging Quantity1000
Lifecycle StatusActive
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance410pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current1.9A (Ta)
Maximum Drain to Source Resistance300 mOhm @ 1.9A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1.8W (Ta)
Maximum Pulse Drain Current7.6A
Maximum Total Gate Charge14nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
PK Package Dimensions NotePopular package size 66% from Suppliers use this Dimension
Package TypePG-SOT223-4
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge4.9nC
Typical Gate to Source Charge1.4nC