2N7002DWH6327XTSA1
MFR #2N7002DWH6327XTSA1
FPN#2N7002DWH6327XTSA1-FL
MFRCypress Semiconductor
Part DescriptionMOSFET 2 N-Channel Array 60V 300mA (Ta) Surface Mount SOT-363
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | 2N7002DW |
Packaging Type | Tape and Reel |
Packaging Quantity | 3000 |
Lifecycle Status | Active |
ROHS | Compliant |
RoHs Exemption Type | RoHS (2015/863), Unknown |
Channel Mode | Enhancement |
Configuration | 2 N-Channel |
Drain Source Voltage | 60V |
Drive Voltage | 4.5V, 10V |
FET Feature | Logic Level Gate |
FET Options | N/R |
FET Type | Array |
Gate to Source Voltage | ±20V |
Input Capacitance | 20pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Active |
Maximum Continuous Drain Current | 300mA (Ta) |
Maximum Drain to Source Resistance | 3 Ohm @ 500mA, 10V |
Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 500mW (Ta) |
Maximum Pulse Drain Current | 1.2A |
Maximum Total Gate Charge | 600pC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
PK Package Dimensions Note | Popular package size 100% from Suppliers use this Dimension |
Package Type | PG-SOT363-6-1 |
Technology | MOSFET (Metal Oxide) |
Technology Type | N/A |
Typical Gate to Drain Charge | 200pC |
Typical Gate to Source Charge | 50pC |