1HN04CH-TL-W
MFR #1HN04CH-TL-W
FPN#1HN04CH-TL-W-FL
MFRonsemi
Part DescriptionN-Channel 100 V 270mA (Ta) Surface Mount 3-CPH
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | 1HN04CH |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 3000 |
| Lifecycle Status | Obsolete |
| ROHS | Compliant |
| RoHs Exemption Type | None, RoHS (2015/863) |
| Reach Status | Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 100V |
| Drive Voltage | 4V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 15pF |
| Input Capacitance Test Voltage | 20V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 270mA (Ta) |
| Maximum Drain to Source Resistance | 8 Ohm @ 140mA, 10V |
| Maximum Gate to Source Threshold Voltage | 2.6V @ 100µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 600mW (Ta) |
| Maximum Pulse Drain Current | 1.08A |
| Maximum Total Gate Charge | 900pC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | N/A |
| Package Type | 3-CPH |
| Technology | MOSFET (Metal Oxide) |
| Technology Type | N/A |
| Typical Gate to Drain Charge | 260pC |
| Typical Gate to Source Charge | 190pC |